Scaling Nanoribbon Transistors with Monolayer TMDs (Stanford, Chalmers, Horiba, SLAC)

Researchers from Stanford University, Chalmers University of Technology, HORIBA Scientific, and SLAC National Accelerator Laboratory have developed nanoribbon transistors using monolayer transition metal dichalcogenides (TMDs). These transistors feature n- and p-type operation with channel lengths and widths as small as 25-30 nm. The fabrication process includes anchored contacts to prevent nanoribbon delamination, and when integrated with thin high-k gate dielectrics, the devices exhibit impressive on-state currents for various TMD materials. This advancement positions top-down patterned 2DS nanoribbons as promising components for future nanosheet transistor architectures.